AT650/850T

Cost-effective, Desktop Thermal ALD

(With in-field upgradeability to Plasma)

  •  Small Footprint (38.1 cm; 15″ across) Desktop Thermal ALD
    • Accommodates samples of 6″ diameter  or smaller.
    • Optional customizable chucks.
  • 4 organometallic source precursors to 175°C.
  • Up to 4 oxidant/reductant sources (MFC controlled).
  • High temperature compatible fast pulsing ALD valves with ultrafast MFC and
    integrated inert gas purge
  • Temperature range to 450 °C (optional up to 580 °C)
  • High exposure available with static processing mode
  • Small Footprint (38.1 cm; 15″ across and 15″ deep) Desktop Thermal ALD
  • Accommodates samples of 6″ diameter with optional customizable chucks.
  • Upgradeable to plasma, in the field.
  • Warm-walled aluminum chamber with heated sample holder from 40 – 450°C
  • 4 organometallic precursors can be heated to 175°C.
  • Up to 4 oxidant/reductant sources each with ultrafast MFCs (2 standard)
  • High temperature compatible fast pulsing ALD valves with an ultrafast MFC for integrated inert gas purge
  • High exposure available with static processing mode
  • Substrate temperatures from 40 to 450 °C ± 1 °C; Precursor temperatures from RT to 175°C ± 2°C (w/ heating jacket)
  • Small footprint (15″ by 15″), bench top installation and fully cleanroom compatible
  • Simple system maintenance and low utilities cost.
  • Streamlined chamber design and small chamber volume
  • Fast cycling capability and high exposure, deep penetration processing available
  • Full HW and SW interlocks for safe operation even in multi-user environment
  • Plasma Upgrade
  • High temperature chuck/platen to 580 °C
  • ATOzone – ozone generator (required for some films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60 °C, high quality HfO2)
  • QCM (Quartz Crystal Microbalance)
  • Additional Counter reactant lines (MFC controlled) – up to 2 additional
  • External control – PC/software link (allows programing and running, remotely)
  • Higher than standard pressure regime
  • Customized systems
  • N2 purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed).
  • Input line is 1/4 female VCR compression fitting
  • Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back
  • Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)
  • Min 19.5cfm wet pump (**PTFE vacuum fluid (like Fomblin) required) (Dry pumps is optional) NW40 (1.5″) connection and also exhaust line (with > 5cfm draw) Greater than 1 meter should use NW50 exhaust line
  • Precursor’s attach via female VCR elbows (always use new gaskets). Elbow: 1/4″ gasket first (with gloves on) For precursor attachment please refer to “AT650T Tool and Software Operation”
  • Human Machine Interface (HMI) PLC system with a 10” touch screen panel
  • Advanced controls suitable for the deposition of standard ALD cycles as well as e.g. Nanolaminates, Doped Thin Films and Ternary Thin Films
  • Recipe database for high quality, tested processes
  • Custom recipe input screen
  • Real time display of process status
  • Individually programmable heated source temperatures
  • Built-in pulsing sequences for ternary compounds and nano-laminates
  • Quick running with simple questions to get user going Input subcycles and overall cycles
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