AT650/850P

Cost effective, Desktop Plasma ALD

  • Plasma ALD at the cost of a thermal system
  • Now with a new advanced hollow cathode source and 60 MHz RF
    • Featuring: low oxygen contamination (in nitrides, etc..), high electron density, low plasma damage
  • Small Footprint (38.1 cm; 15″ across) Desktop Plasma ALD
    • Accommodates samples of 6″ diameter  or smaller.
    • Optional customizable chucks.
  • 4 organometallic source precursors to 175 °C.
  • Up to 4 oxidant/reductant sources (MFC controlled).
  • High-temperature-compatible fast-pulsing ALD valves with ultrafast MFC for
    integrated inert gas purge
  • Temperature range to 450 °C (up to 580 °C available)
  • High exposure available with static processing mode
  • Small Footprint (38.1 cm; 15″ across) Desktop Plasma ALD
  • High efficiency, remote 300 watt hollow cathode source and 60 MHz RF generator Features: low oxygen contamination, high electron density, low plasma damage
  • Integrated matching network
  • Accommodates samples of 6″ diameter with optional customizable chucks.
  • Warm walled aluminum chamber with heated sample holder from 40 – 450 °C (580 °C available)
  • 4 organometallic precursors can be heated to 175 °C.
  • Up to 4 oxidant/reductant sources each with ultrafast MFCs (2 standard)
  • High temperature compatible fast pulsing ALD valves with an ultrafast MFC and integrated inert gas purge
  • High exposure available with static processing mode
  • Substrate temperatures from 40 to 450 °C ± 1 °C (580 °C optional) ; Precursor temperatures from RT to 175 °C ± 2 °C (w/ heating jacket)
  • Small footprint (15″ by 15″), bench top installation and fully cleanroom compatible
  • Simple system maintenance and low utilities cost.
  • Streamlined chamber design and small chamber volume
  • Fast cycling capability and high exposure, deep penetration processing available
  • Full HW and SW interlocks for safe operation even in multi-user environment.
  • Customized chuck/platen
  • High temperature chuck up to 580 °C
  • QCM (Quartz Crystal Microbalance)
  • Additional Counter reactant lines (MFC controlled) – up to 2 additional
  • Optional bubbler available with pressure boost technology
  • Load lock (or glove box integration)
  • External control – PC/software link (allows programming and running, remotely)
  • Higher than standard pressure regime
  • Customized systems
  • N2 purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed).
  • Input line is 1/4 female VCR compression fitting
  • Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back
  • Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)
  • Min 19.5cfm wet pump (**PTFE vacuum fluid (like Fomblin) required) (Dry pump is optional) NW40 (1.5″) connection and also exhaust line (with > 5cfm draw) Greater than 1 meter should use NW50 exhaust line
  • Precursor’s attach via female VCR elbows (always use new gaskets). Elbow: 1/4″ gasket first (with gloves on) For precursor attachment please refer to “AT650P Tool and Software Operation”
  • Human Machine Interface (HMI) PLC system with a 10” touch screen panel
  • Advanced controls suitable for the deposition of standard ALD cycles as well as e.g. Nanolaminates, Doped Thin Films and Ternary Thin Films
  • Recipe database for high quality, tested processes
  • Custom recipe input screen
  • Real time display of process status
  • Individually programmable heated source temperatures
  • Built-in pulsing sequences for ternary compounds and nano-laminates
  • Quick running with simple questions to get user going Input subcycles and overall cycles
  • 📩 Request technical documentation, pricing, or place an order, all in one step.
    Use the form below to reach our engineering and sales teams directly. We ensure a prompt and accurate response tailored to your needs.

    📞 For direct support, call us at +34 910 097 846. No wait lines, no bots, just expert guidance.