Small Footprint Desktop System (< 0.15m3 | 2.5 sq ft)
High temperature compatible fast pulsing ALD valves with ultrafast MFC for integrated inert gas purge.
4″ circular chuck customizable for smaller sizes or other shapes (11 mm tall).
3 organometallic precursors up to 175 °C and 2 (up to 3) counter reactants.
Heated lines throughout (from precursor to chamber).
High exposure (for trenches and porous substrates) and static processing mode
All aluminum (semiconductor grade) chamber ‒ range up to 320 °C
7″ touchscreen PLC controller (no PC required)
Lifetime software upgrades included
1 year warrantyChamber temperatures from RT to 320 °C ± 1 °C; Precursor temperatures from RT to 175 °C ± 2°C (w/ heating jacket)
Smallest footprint on market (2.5 sq ft), bench top installation and cleanroom compatible
Simple system maintenance and lowest utilities and precursor usage on the market
Streamlined chamber design and small chamber volume
Fast cycling capability (up to 1.2nm/min Al2O3) and high exposure, deep penetration processing available
Full HW and SW interlocks for safe operation even in multi-user environmentCustomized chuck/platen (square, indents for smaller pieces, batch)
Customized chamber (thicker substrates, example: optical components)
NEW Optional chuck to 450 + °C (ask us)
NEW Available Hollow Cathode RF Source, 300 W Plasma (AT – 410 Plus)
ATOzone – Ozone generator (required for some films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
Optional – Ozone Safety Monitor w real time detection of ambient ozone gas
QCM (Temperature-compensating Quartz Crystal Microbalance)
Glovebox integration (typically required to not expose substrate to moisture; Nitrides, Sulfides, etc..)
External control – PC/software link (allows programing and running, remotely)
Ventable Precursor cabinet
Spare Chamber
IGPA (inert gas pressure assist) for low vapor pressure precursors
Third counter reactant
Software control of third counter reactantN2 purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed), .
Input line is 1/4 female VCR compression fitting
Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back
Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)
Min 12cfm wet pump (**PTFE vacuum fluid (like Fomblin) required) (610 and 810 use larger pumps typically 19.5 cfm or higher)
NW25 (KF25) (1″) connection and also exhaust line (with > 5cfm draw)
Greater than 1 meter should use NW40 (1.5″) exhaust line
Precursor’s attach via female VCR elbows (always use new gaskets).
Elbow: 1/4″ gasket first (with gloves on)
For precursor attachment please refer to AT410/AT610 Tool and Software Operation.Human Machine Interface (HMI) PLC system with a 7” touch screen
panel
Advanced controls suitable for the deposition of standard ALD cycles as
well as e.g. Nanolaminates, Doped Thin Films and Ternary Thin Films
Recipe database for high quality, tested processes
Custom recipe input screen
Real time display of process status
Individually programmable heated source temperatures
Built-in pulsing sequences for ternary compounds and nano-laminates
Quick running with simple questions to get user going
Input subcycles and overall cycles 
